Metal film production apparatus

ABSTRACT

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2  gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (Cu x Cl y ). The precursor (Cu x Cl y ) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

[0001] The entire disclosure of Japanese Patent Application No.2001-348315 filed on Nov. 14, 2001 including specification, claims,drawings and summary is incorporated herein by reference in itsentirety.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention relates to a metal film production apparatus and ametal film production method which produce a metal film on the surfaceof a substrate by a vapor phase growth method.

[0004] 2. Description of Related Art

[0005] In preparing a metal film, such as a thin film of copper, by thevapor phase growth method, it has been common practice to use anorganometallic complex of a liquid, for example,copper-hexafluoroacetylacetonato-trimethylvinylsilane, as a startingmaterial, dissolve the solid starting material in a solvent, andvaporize the solution by use of a thermal reaction to form a film on asubstrate.

[0006] With the above-mentioned conventional technique, it has beendifficult to increase the speed of film formation, because the film isformed with the use of a thermal reaction. Moreover, the metal complexas the starting material is expensive. In addition,hexafluoroacetylacetonato and trimethylvinylsilane accompanying copperremain as impurities in the thin film of copper, making it difficult toimprove the quality of the film.

SUMMARY OF THE INVENTION

[0007] The present invention has been accomplished in light of thecircumstances described above. Its object is to provide a metal filmproduction apparatus and a metal film production method which have ahigh film formation speed, which can use an inexpensive startingmaterial, and which are free from impurities remaining in a film.

[0008] According to an aspect of the present invention, there isprovided a metal film production apparatus, comprising a chamberaccommodating a substrate and having an upper portion open; source gassupply means for supplying a source gas containing a halogen into thechamber; a ceiling member made of an insulating material for closing anopening of the upper portion of the chamber; an antenna member providedoutwardly of the ceiling member and adapted to convert an atmospherewithin the chamber into a plasma by supply of power; an etched membermade of a metal and comprising a plurality of segments which arearranged between the substrate and the ceiling member in a discontinuousstate relative to a flowing direction of electricity in the antennamember; plasma generation means which supplies power to the antennamember to generate on a substrate side of the etched member a flow ofelectricity in the same direction as the flowing direction ofelectricity in the antenna member, thereby converting the atmospherewithin the chamber into a plasma and generating a source gas plasma sothat the etched member is etched with the source gas plasma to form aprecursor of a metal component contained in the etched member and thesource gas; and temperature control means for controlling a temperatureof the substrate to be lower than a temperature of the etched member todeposit the metal component of the precursor on the substrate as a film.

[0009] Thus, the invention can provide a metal film production apparatuswhich has a high film formation speed, which can use an inexpensivestarting material, and which can form a metal film free from impuritiesremaining therein. Furthermore, an induced current occurring in theetched member flows in the same direction as the direction of flow ofelectricity in the antenna member when viewed from the substrate. Eventhough the etched member, an electric conductor, exists opposite theantenna member, electromagnetic waves are reliably thrown from theantenna member into the chamber. Consequently, the source gas plasma canbe stably generated, with the etched member being held between theantenna member and the substrate.

[0010] According to another aspect of the present invention, there isprovided a metal film production apparatus, comprising a cylindricalchamber accommodating a substrate and open at one end; a disk-shapedceiling member made of an insulating material for closing an opening ofthe chamber; source gas supply means for supplying a source gascontaining a halogen into the chamber; an antenna member of a planarring shape provided outwardly of the ceiling member and adapted toconvert an atmosphere within the chamber into a plasma by supply ofpower; an etched member made of a metal and comprising a plurality ofsegments which are arranged in a circumferential direction of thechamber and extend in a diametrical direction of the chamber between thesubstrate and the ceiling member, and which are in a discontinuous staterelative to a flowing direction of electricity in the antenna member;plasma generation means which supplies power to the antenna member togenerate on a substrate side of the etched member a flow of electricityin the same direction as the flowing direction of electricity in theantenna member, thereby converting the atmosphere within the chamberinto a plasma and generating a source gas plasma so that the etchedmember is etched with the source gas plasma to form a precursor of ametal component contained in the etched member and the source gas; andtemperature control means for controlling a temperature of the substrateto be lower than a temperature of the etched member to deposit the metalcomponent of the precursor on the substrate as a film.

[0011] Thus, the invention can provide a metal film production apparatuswhich has a high film formation speed, which can use an inexpensivestarting material, and which can form a metal film free from impuritiesremaining therein. Furthermore, an induced current occurring in theetched member flows in the same direction as the direction of flow ofelectricity in the planar ring-shaped antenna member when viewed fromthe substrate. Even though the etched member, an electric conductor,exists opposite the planar ring-shaped antenna member, electromagneticwaves are reliably thrown from the antenna member into the chamber.Consequently, the source gas plasma can be stably generated, with theetched member being held between the antenna member and the substrate.

[0012] According to still another aspect of the present invention, thereis provided a metal film production apparatus, comprising a cylindricalchamber accommodating a substrate and open at one end; an outwardlycurved convex ceiling member made of an insulating material for closingan opening of the chamber; source gas supply means for supplying asource gas containing a halogen into the chamber; an antenna member of aconical ring shape provided in surroundings outward of the ceilingmember and adapted to convert an atmosphere within the chamber into aplasma by supply of power; an etched member made of a metal andcomprising a plurality of segments which are arranged in acircumferential direction of the chamber and extend in a diametricaldirection of the chamber between the substrate and the ceiling member,and which are in a discontinuous state relative to a flowing directionof electricity in the antenna member; plasma generation means whichsupplies power to the antenna member to generate on a substrate side ofthe etched member a flow of electricity in the same direction as theflowing direction of electricity in the antenna member, therebyconverting the atmosphere within the chamber into a plasma andgenerating a source gas plasma so that the etched member is etched withthe source gas plasma to form a precursor of a metal component containedin the etched member and the source gas; and temperature control meansfor controlling a temperature of the substrate to be lower than atemperature of the etched member to deposit the metal component of theprecursor on the substrate as a film.

[0013] Thus, the invention can provide a metal film production apparatuswhich has a high film formation speed, which can use an inexpensivestarting material, and which can form a metal film free from impuritiesremaining therein. Furthermore, an induced current occurring in theetched member flows in the same direction as the direction of flow ofelectricity in the conical ring-shaped antenna member when viewed fromthe substrate. Even though the etched member, an electric conductor,exists opposite the conical ring-shaped antenna member, electromagneticwaves are reliably thrown from the antenna member into the chamber.Consequently, the source gas plasma can be stably generated inwardly ofthe etched member.

[0014] According to a further aspect of the present invention, there isprovided a metal film production apparatus, comprising a cylindricalchamber accommodating a substrate and open at one end; a disk-shapedceiling member made of an insulating material for closing an opening ofthe chamber; a tubular portion made of an insulating material which isprovided on the one end of the chamber; source gas supply means forsupplying a source gas containing a halogen into the chamber; an antennamember of a planar ring shape provided outwardly of the ceiling memberand adapted to convert an atmosphere within the chamber into a plasma bysupply of power; a coil antenna member of a cylindrical coil shapeprovided around the tubular portion and adapted to convert theatmosphere within the chamber into a plasma by supply of power; anetched member made of a metal and comprising a plurality of segmentswhich are arranged in a circumferential direction of the chamber andextend in a diametrical direction of the chamber between the substrateand the ceiling member, and which are in a discontinuous state relativeto a flowing direction of electricity in the antenna member and the coilantenna member; plasma generation means which supplies power to theantenna member and the coil antenna member to generate on a side of theetched member opposite to the antenna member a flow of electricity inthe same direction as the flowing direction of electricity in theantenna member, thereby converting the atmosphere within the chamberinto a plasma and generating a source gas plasma so that the etchedmember is etched with the source gas plasma to form a precursor of ametal component contained in the etched member and the source gas; andtemperature control means for controlling a temperature of the substrateto be lower than a temperature of the etched member to deposit the metalcomponent of the precursor on the substrate as a film.

[0015] Thus, the invention can provide a metal film production apparatuswhich has a high film formation speed, which can use an inexpensivestarting material, and which can form a metal film free from impuritiesremaining therein. Furthermore, an induced current occurring in theetched member flows in the same direction as the direction of flow ofelectricity in the planar ring-shaped antenna member and the coilantenna member when viewed from the substrate. Even though the etchedmember, an electric conductor, exists opposite the planar ring-shapedantenna member and the coil antenna member, electromagnetic waves arereliably thrown from the antenna members into the chamber. Consequently,the source gas plasma can be stably generated inwardly of the etchedmember.

[0016] The metal film production apparatus may further comprise samepotential maintaining means for connecting the plurality of segments ofthe etched member electrically to impart the same potential thereto. Inthe metal film production apparatus, the temperature control means maybe means provided in the etched member and adapted to keep the etchedmember at a higher temperature than the temperature of the substrate. Inthe metal film production apparatus, the source gas supply means may bea gas supply passage and gas ejection holes provided in the etchedmember, the gas ejection holes communicating with the gas supplypassage.

[0017] In the metal film production apparatus, a concave portion forcreating a discontinuous concavity may be formed in a surface of theetched member facing the substrate. In the metal film productionapparatus, the source gas containing the halogen may be a source gascontaining chlorine. In the metal film production apparatus, the etchedmember may be made of copper to form Cu_(x)Cl_(y) as the precursor. Inthe metal film production apparatus, the etched member may be made oftantalum, tungsten or titanium which is a halide-forming metal.

[0018] According to a still further aspect of the present invention,there is provided a metal film production method involving converting anatmosphere within a chamber accommodating a substrate into a plasma bysupply of power from an antenna member, comprising: disposing an etchedmember made of a metal and comprising a plurality of segments which arearranged in a discontinuous state relative to a flowing direction ofelectricity in the antenna member; supplying power to the antenna memberto generate on a substrate side of the etched member a flow ofelectricity in the same direction as the flowing direction ofelectricity in the antenna member, thereby converting the atmospherewithin the chamber into a plasma and generating a source gas plasma sothat the etched member is etched with the source gas plasma to form aprecursor of a metal component contained in the etched member and asource gas; and controlling a temperature of the substrate to be lowerthan a temperature of the etched member to deposit the metal componentof the precursor on the substrate as a film.

[0019] Thus, the invention can provide a metal film production methodwhich has a high film formation speed, which can use an inexpensivestarting material, and which can form a metal film free from impuritiesremaining therein. Furthermore, an induced current occurring in theetched member flows in the same direction as the direction of flow ofelectricity in the antenna member when viewed from the substrate. Eventhough the etched member, an electric conductor, exists opposite theantenna member, electromagnetic waves are reliably thrown from theantenna member into the chamber. Consequently, the source gas plasma canbe stably generated, with the etched member being held between theantenna member and the substrate.

[0020] In the metal film production method, the source gas containingthe halogen may be a source gas containing chlorine. The etched membermay be made of copper to form Cu_(x)Cl_(y) as the precursor. The etchedmember may be made of tantalum, tungsten or titanium which is ahalide-forming metal.

BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will become more fully understood from thedetailed description given hereinbelow and the accompanying drawingswhich are given by way of illustration only, and thus are not limitativeof the present invention, and wherein:

[0022]FIG. 1 is a schematic side view of a metal film productionapparatus for performing a metal film production method according to afirst embodiment of the present invention;

[0023]FIG. 2 is a sectional view taken on line II-II of FIG. 1;

[0024]FIG. 3 is a sectional view taken on line III-III of FIG. 2;

[0025]FIG. 4 is a plan view showing another embodiment of an etchedmember;

[0026]FIG. 5 is a schematic side view of a metal film productionapparatus for performing a metal film production method according to asecond embodiment of the present invention;

[0027]FIG. 6 is a schematic side view of a metal film productionapparatus for performing a metal film production method according to athird embodiment of the present invention;

[0028]FIG. 7 is a schematic side view of a metal film productionapparatus for performing a metal film production method according to afourth embodiment of the present invention; and

[0029]FIG. 8 is a schematic side view of a metal film productionapparatus for performing a metal film production method according to afifth embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] The first embodiment of the metal film production apparatus andmetal film production method of the present invention will be describedwith reference to FIGS. 1 to 3. FIG. 1 is a schematic side view of themetal film production apparatus for performing the metal film productionmethod according to the first embodiment of the present invention. FIG.2 is a sectional view taken on line II-II of FIG. 1. FIG. 3 is asectional view taken on line III-III of FIG. 2. FIG. 4 is a plan viewshowing another embodiment of an etched member.

[0031] As shown in the drawings, a support platform 2 is provided nearthe bottom of a cylindrical chamber 1 made of a metal (e.g., aluminum),and a substrate 3 is placed on the support platform 2. Temperaturecontrol means 6 equipped with a heater 4 and refrigerant flow-throughmeans 5 is provided in the support platform 2 so that the supportplatform 2 is controlled to a predetermined temperature (for example, atemperature at which the substrate 3 is maintained at 100 to 200° C.) bythe temperature control means 6.

[0032] An upper surface of the chamber 1 is an opening, which is closedwith a disk-shaped ceiling board 7, a ceiling member made of aninsulating material (for example, a ceramic). The interior of thechamber 1 closed with the ceiling board 7 is maintained at apredetermined pressure by a vacuum device 8. A nozzle 12 for supplying asource gas (a Cl₂ gas diluted with He or Ar to a chlorine concentrationof ≦50%, preferably about 10%) containing chlorine as a halogen to theinterior of the chamber 1 is connected to a cylindrical portion of thechamber 1 above the support platform 2. The nozzle 12 is open toward theceiling board 7, and is fed with the source gas via a flow controller13. Fluorine (F), bromine (Br) or iodine (I) can also be applied as thehalogen to be incorporated into the source gas.

[0033] A plurality of the nozzles 12 can be provided in acircumferential direction such that the nozzles 12 are open in two ormore different directions in the circumferential direction. By choosingthe nozzles 12 different in the opening direction according tosituations, the status of supply of the source gas (the status ofgeneration of a plasma) can be controlled. The locations of the nozzles12 are not limited to the illustrated embodiment; the nozzles 12 can beprovided in a horizontal direction in an upper portion of the chamber 1,or can be provided in two stages, i.e., in an upper portion and a lowerportion of the chamber 1.

[0034] An etched member 18 made of a metal (Cu) is interposed betweenthe opening at the upper surface of the chamber 1 and the ceiling board7. As shown in FIGS. 1 and 2, the etched member 18 is provided with aring portion 19 fitted to the opening at the upper surface of thechamber 1. A plurality of (12 in the illustrated embodiment) protrusions20, which extend close to the center in the diametrical direction of thechamber 1 and have the same width, are provided in the circumferentialdirection on the inner periphery of the ring portion 19. The protrusions20 are integrally or removably attached to the ring portion 19. Notches(spaces) 35 formed between the protrusions 20 are present between theceiling board 7 and the interior of the chamber 1. The ring portion 19is earthed, and the plural protrusions 20 are electrically connectedtogether and maintained at the same potential (same potentialmaintaining means).

[0035] As shown in FIG. 4, second protrusions 36 shorter in thediametrical direction than the protrusions 20 can be arranged betweenthe protrusions 20. Moreover, short protrusions can be arranged betweenthe protrusion 20 and the second protrusion 36. By so doing, the area ofcopper, an object to be etched, can be secured, with an induced currentbeing suppressed.

[0036] A plasma antenna 9, as an antenna member for converting theatmosphere inside the chamber 1 into a plasma, is provided above theceiling board 7. The plasma antenna 9 is formed in a planar ring shapeparallel to the surface of the ceiling board 7. A matching instrument 10and a power source 11, as plasma generation means, are connected to theplasma antenna 9 to supply power. The etched member 18 has the pluralityof protrusions 20 provided in the circumferential direction on the innerperiphery of the ring portion 19, and includes the notches (spaces) 35formed between the protrusions 20. Thus, the protrusions 20 are arrangedbetween the substrate and the ceiling member in a discontinuous staterelative to the flowing direction of electricity in the plasma antenna9.

[0037] With the above-described metal film production apparatus, thesource gas is supplied through the nozzles 12 to the interior of thechamber 1, and electromagnetic waves are shot from the plasma antenna 9into the chamber 1. As a result, the Cl₂ gas is ionized to generate aCl₂ gas plasma (source gas plasma) 14. The etched member 18, an electricconductor, is present below the plasma antenna 9. However, the Cl₂ gasplasma 14 occurs stably between the etched member 18 and the substrate3, namely, below the etched member 18, under the following action:

[0038] The action by which the Cl₂ gas plasma 14 is generated below theetched member 18 will be described. As shown in FIG. 3, a flow A ofelectricity in the plasma antenna 9 of the planar ring shape crosses theprotrusions 20. At this time, an induced current B occurs on the surfaceof the protrusion 20 opposed to the plasma antenna 9. Since the notches(spaces) 35 are present in the etched member 18, the induced current Bflows onto the lower surface of each protrusion 20, forming a flow a inthe same direction as the flow A of electricity in the plasma antenna 9(Faraday shield).

[0039] When the etched member 18 is viewed from the substrate 3,therefore, there is no flow in a direction in which the flow A ofelectricity in the plasma antenna 9 is canceled out. Furthermore, thering portion 19 is earthed, and the protrusions 20 are maintained at thesame potential. Thus, even though the etched member 18, an electricconductor, exists, the electromagnetic wave is reliably thrown from theplasma antenna 9 into the chamber 1. Consequently, the Cl₂ gas plasma 14is stably generated below the etched member 18.

[0040] It is also possible to eliminate instability of the plasma due todifferences in potential not by connecting the protrusions 20 to thering portion 19, but by controlling the supply of the source gas.

[0041] Owing to the Cl₂ gas plasma 14, an etching reaction occurs in theetched member 18 made of copper to form a precursor (Cu_(x)Cl_(y)) 15.At this time, the etched member 18 is maintained by the Cl₂ gas plasma14 at a predetermined temperature (e.g., 200 to 400° C.) higher than thetemperature of the substrate 3. The precursor (Cu_(x)Cl_(y)) 15 formedwithin the chamber 1 is transported toward the substrate 3 controlled toa temperature lower than the temperature of the etched member 18. Theprecursor (Cu_(x)Cl_(y)) 15 transported toward the substrate 3 isconverted into only Cu ions by a reduction reaction, and directed at thesubstrate 3 to form a thin Cu film 16 on the surface of the substrate 3.

[0042] The reaction in this case can be expressed by:

2Cu+Cl₂→2CuCl→2Cu↓+Cl₂↑

[0043] The gas that has not been involved in the reaction, and theetching product are exhausted through an exhaust port 17.

[0044] The source gas has been described, with the Cl₂ gas diluted with,say, He or Ar taken as an example. However, the Cl₂ gas can be usedalone, or an HCl gas can also be applied. When the HCl gas is applied,an HCl gas plasma is formed as the source gas plasma, but the precursorformed by etching of the etched member 18 is Cu_(x)Cl_(y). Thus, thesource gas may be any gas containing chlorine, and a gas mixture of anHCl gas and a Cl₂ gas is also usable. The material for the etched member18 is not limited to copper (Cu), but may be a halide-forming metal,preferably, a chloride-forming metal, such as Ag, Au, Pt, Ta, Ti or W.In this case, the precursor is a halide (chloride) of Ag, Au, Pt, Ta, Tior W, and the thin firm formed on the surface of the substrate 3 is athin film of Ag, Au, Pt, Ta, Ti or W.

[0045] The metal film production apparatus having the above-describedfeatures uses the Cl₂ gas plasma (source gas plasma) 14. Thus, theefficiency of the reaction markedly increases, and the film formingspeed increases. Also, since a Cl₂ gas is used as the source gas, thecost can be decreased sharply. Moreover, the substrate 3 is controlledto a temperature lower than the temperature of the etched member 18 withthe use of the temperature control means 6. Hence, smaller amounts ofimpurities, such as chlorine, can be left in the thin Cu film 16, sothat a high quality thin Cu film 16 can be formed.

[0046] In addition, the etched member 18 has the plurality ofprotrusions 20 provided in the circumferential direction on the innerperiphery of the ring portion 19, and includes the notches (spaces) 35formed between the protrusions 20. Thus, the induced currents generatedin the etched member 18 flow in the same direction as the flowingdirection of electricity in the plasma antenna 9, when viewed from thesubstrate 3. Therefore, even though the etched member 18, an electricconductor, exists below the plasma antenna 9, the electromagnetic wavesare reliably thrown from the plasma antenna 9 into the chamber 1.Consequently, the Cl₂ gas plasma 14 can be stably generated below theetched member 18.

[0047] Many grooves or depressions may be formed in the underside of theetched member 18 (protrusion 20) to create a discontinuous concavity inthe surface. By so doing, even if copper grows on the underside of theprotrusion 20 from the precursor 15 formed by etching with the Cl₂ gasplasma 14, the copper does not grow just downward from the underside ofthe protrusion 20.

[0048] A portion of the chamber 1, where the substrate 3 is disposed,may be partitioned off with a partition member made of an insulatorbelow the nozzles 12. Many holes may be punched in the partition member,and the precursor (Cu_(x)Cl_(y)) 15 formed by etching may be transportedonto the substrate 3 through the resulting holes. That is, the interiorof the chamber 1 can be divided into a site, where the Cl₂ gas plasma 14is generated, and a site, where the substrate 3 is installed below thenozzles 12, by the partition member provided with the many holes. By soisolating the substrate 3 from the Cl₂ gas plasma 14, the substrate 3 isnot exposed to the Cl₂ gas plasma 14, and thus is free from damage fromthe plasma.

[0049] The metal film production apparatus and metal film productionmethod according to the second embodiment of the present invention willbe described with reference to FIG. 5. FIG. 5 shows a schematic sideview of the metal film production apparatus for performing the metalfilm production method according to the second embodiment of the presentinvention. The same members as the members illustrated in FIG. 1 areassigned the same numerals, and duplicate explanations are omitted.

[0050] The metal film production apparatus according to the secondembodiment shown in FIG. 5 is the metal film production apparatus shownin FIG. 1 provided that the shape of the etched member has been changed.That is, an etched member 21 made of a metal (Cu) is held between theopening at the upper surface of the chamber 1 and the ceiling board 7.The etched member 21 has a ring portion 22 fitted to the opening at theupper surface of the chamber 1, the ring portion 22 being in the form ofa short cylinder having the same diameter as the diameter of the chamber1.

[0051] A plurality of protrusions 23, which extend close to the centerin the diametrical direction of the chamber 1, have the same width, andhave a lower surface inclined upward and a thickness progressivelydecreased in an upward direction, are provided in the circumferentialdirection on the inner periphery of the ring portion 22. For example,the thickness of the front end of the protrusion 23 is set at about afourth to fifth of the thickness of the ring portion 22. The ringportion 22 is earthed, and the plural protrusions 23 are electricallyconnected together and maintained at the same potential (same potentialmaintaining means). Notches (spaces) are present between the protrusions23 in the same manner as in the first embodiment.

[0052] A sheath heater 24 is provided in the protrusion 23, and thetemperature of the protrusion 23 is controlled by a thermocouple 25(sensor) to a predetermined temperature higher than the temperature ofthe substrate 3 (the action of temperature control means). The sheathheater 24 and the thermocouple 25 may be provided in all of theprotrusions 23, or may be provided in the protrusions 23 arrangedalternately. Further, the sheath heater 24 and the thermocouple 25 canbe provided in the ring portion 22.

[0053] With the above-described metal film production apparatus, asource gas is supplied through the nozzles 12 to the interior of thechamber 1, and electromagnetic waves are shot from the plasma antenna 9into the chamber 1. As a result, the Cl₂ gas is ionized to generate aCl₂ gas plasma (source gas plasma) 14. The etched member 21, an electricconductor, is present below the plasma antenna 9. However, since thenotches (space) are present, there is no flow in a direction in whichthe flow of electricity in the plasma antenna 9 is canceled out, whenthe etched member 21 is viewed from the substrate 3, as in the firstembodiment. Furthermore, the ring portion 22 is earthed, and theprotrusions 23 are maintained at the same potential. Thus, even thoughthe etched member 21, an electric conductor, exists, the electromagneticwaves are reliably thrown from the plasma antenna 9 into the chamber 1.Consequently, the Cl₂ gas plasma 14 is stably generated below the etchedmember 18.

[0054] Owing to the Cl₂ gas plasma 14, an etching reaction occurs in theetched member 21 made of copper to form a precursor (Cu_(x)Cl_(y)) 15.At this time, the etched member 21 is maintained by the Cl₂ gas plasma14 and the sheath heater 24 at a predetermined temperature (e.g., 200 to400° C.) higher than the temperature of the substrate 3. The precursor(Cu_(x)Cl_(y)) 15 formed within the chamber 1 is transported toward thesubstrate 3 controlled to a temperature lower than the temperature ofthe etched member 21. The precursor (Cu_(x)Cl_(y)) 15 transported towardthe substrate 3 is converted into only Cu ions by a reduction reaction,and directed at the substrate 3 to form a thin Cu film 16 on the surfaceof the substrate 3.

[0055] In the metal film production apparatus having the above features,the etched member 21 is controlled by the sheath heater 24 and thethermocouple 25 to a predetermined temperature higher than thetemperature of the substrate 3. This control, coupled with thetemperature control of the substrate 3 by the temperature control means6, enables the temperature relationship between the etched member 21 andthe substrate 3 to be controlled to temperature conditions optimal forthe reduction reaction of the precursor (Cu_(x)Cl_(y)) 15. Moreover, theportion of the protrusion 23 beside the ring portion 22 is thick. Thus,the etching reaction can be performed efficiently by the effective useof the Cl₂ gas plasma 14 existent below.

[0056] Many grooves or depressions may be formed in the underside of theetched member 21 (protrusion 23) to create a discontinuous cavity in thesurface. By so doing, even if copper grows on the underside of theprotrusion 23 from the precursor 15 formed by etching with the Cl₂ gasplasma 14, the copper does not grow just downward from the underside ofthe protrusion 23.

[0057] The metal film production apparatus and metal film productionmethod according to the third embodiment of the present invention willbe described with reference to FIG. 6. FIG. 6 shows a schematic sideview of the metal film production apparatus for performing the metalfilm production method according to the third embodiment of the presentinvention. The same members as the members illustrated in FIG. 1 areassigned the same numerals, and duplicate explanations are omitted.

[0058] The metal film production apparatus according to the thirdembodiment shown in FIG. 6 is the metal film production apparatus shownin FIG. 1 provided that the nozzles 12 and the flow controllers 13 atthe lower portion of the chamber 1 are not provided. A gas passage 26 isformed in the center of the protrusion 20, and gas ejection holes 27communicating with the gas passage 26 are formed at the front end of theprotrusion 20 and at suitable positions in a lower area of theprotrusion 20. A source gas is supplied from a flow controller 13 to thegas passage 26.

[0059] With the above-described metal film production apparatus, thesource gas is supplied to the interior of the chamber 1 through the gasejection holes 27 of the protrusions 20, and electromagnetic waves areshot from the plasma antenna 9 into the chamber 1. As a result, the Cl₂gas is ionized to generate a Cl₂ gas plasma (source gas plasma) 14. Theetched member 18, an electric conductor, is present below the plasmaantenna 9. However, there is no flow in a direction in which the flow ofelectricity in the plasma antenna 9 is canceled out, when the etchedmember 18 is viewed from the substrate 3, as in the first embodiment.Furthermore, the ring portion 19 is earthed, and the protrusions 20 aremaintained at the same potential. Thus, even though the etched member18, an electric conductor, exists, the electromagnetic waves arereliably thrown from the plasma antenna 9 into the chamber 1.Consequently, the Cl₂ gas plasma 14 is stably generated below the etchedmember 18.

[0060] Owing to the Cl₂ gas plasma 14, an etching reaction occurs in theetched member 18 made of copper to form a precursor (Cu_(x)Cl_(y)) 15.At this time, the etched member 18 is maintained by the Cl₂ gas plasma14 at a predetermined temperature (e.g., 200 to 400° C.) higher than thetemperature of the substrate 3. The precursor (Cu_(x)Cl_(y)) 15 formedwithin the chamber 1 is transported toward the substrate 3 controlled toa temperature lower than the temperature of the etched member 18. Theprecursor (Cu_(x)Cl_(y)) 15 transported toward the substrate 3 isconverted into only Cu ions by a reduction reaction, and directed at thesubstrate 3 to form a thin Cu film 16 on the surface of the substrate 3.

[0061] In the metal film production apparatus having the above features,the source gas is supplied to the interior of the chamber 1 through thegas ejection holes 27 of the protrusions 20. Thus, separately installednozzles are unnecessary, and the desired amount of the source gas can besupplied to the desired site. Consequently, it becomes possible topromote stabilization of the Cl₂ gas plasma 14 below the etched member18.

[0062] In addition, the etched member may comprise the protrusions 20 ofthe third embodiment provided with the gas passage 26 and the gasejection holes 27, and the protrusions 23 of the second embodimentprovided with the sheath heater 24 and the thermocouple 25, theprotrusions 20 and the protrusions 23 being arranged alternately in thecircumferential direction of the etched member. According to thisconfiguration, it becomes possible to realize, at the same time, theoptimal control of the temperature relationship between the substrate 3and the etched member, and the promotion of stabilization of the Cl₂ gasplasma 14.

[0063] The metal film production apparatus and metal film productionmethod according to the fourth embodiment of the present invention willbe described with reference to FIG. 7. FIG. 7 shows a schematic sideview of the metal film production apparatus for performing the metalfilm production method according to the fourth embodiment of the presentinvention. The same members as the members illustrated in FIG. 1 areassigned the same numerals, and duplicate explanations are omitted.

[0064] The metal film production apparatus according to the fourthembodiment shown in FIG. 7 is the metal film production apparatus shownin FIG. 1 provided that the shapes of the ceiling member, plasmaantenna, and etched member are different. That is, a bowl-shaped(dome-shaped) ceiling member 28, which is made of an insulating material(ceramic or the like) and is convex outwardly, is fixed to an upperopening of the chamber 1.

[0065] An etched member 29 made of a metal. (Cu) is held between theopening at the upper surface of the chamber 1 and the ceiling member 28.The etched member 29 has a ring portion 30 fitted on the opening at theupper surface of the chamber 1, and a plurality of protrusions 31, whichextend close to the center in the diametrical direction of the chamber 1and extend along the bowl-shaped inner surface of the ceiling member 28,are provided in the circumferential direction on the inner periphery ofthe ring portion 30. The ring portion 30 is earthed, and the pluralprotrusions 31 are electrically connected together and maintained at thesame potential (same potential maintaining means).

[0066] A sheath heater 24 and a thermocouple 25, as shown in the secondembodiment, or a gas passage 26 and gas ejection holes 27, as shown inthe third embodiment, may be provided in the protrusion 31 of the etchedmember 29. Many grooves or depressions may be formed in the underside ofthe protrusion 31 to create a discontinuous concavity in the surface. Byso doing, even if copper grows on the underside of the protrusion 31from the precursor 15 formed by etching with the Cl₂ gas plasma 14, thecopper does not grow just downward from the underside of the protrusion31.

[0067] A plasma antenna 32, as an antenna member for converting theatmosphere inside the chamber 1 into a plasma, is provided in thesurroundings above the ceiling member 28. The plasma antenna 32 isformed in a conical ring shape along the bowl-shaped surface of theceiling member 28. A matching instrument 10 and a power source 11, asplasma generation means, are connected to the plasma antenna 32 tosupply power. The etched member 29 has the plurality of protrusions 31provided in the circumferential direction along the bowl-shaped surfaceof the ceiling member 28 on the inner periphery of the ring portion 30,and includes notches (spaces) formed between the protrusions 31. Thus,the protrusions 31 are arranged between a substrate 3 and the ceilingmember 28 in a discontinuous state relative to the flowing direction ofelectricity in the plasma antenna 32.

[0068] With the above-described metal film production apparatus, thesource gas is supplied through the nozzle 12 to the interior of thechamber 1, and electromagnetic waves are shot from the plasma antenna 32into the chamber 1. As a result, the Cl₂ gas is ionized to generate aCl₂ gas plasma (source gas plasma) 14. The etched member 29, an electricconductor, is present in a portion inside the chamber 1 opposed to theplasma antenna 32, with the ceiling member 28 being held between theplasma antenna 32 and the etched member 29. However, since the notches(spaces) are present, there is no flow in a direction in which the flowof electricity in the plasma antenna 32 is canceled out, when the etchedmember 29 is viewed from the substrate 3, as in the first embodiment.Furthermore, the ring portion 30 is earthed, and the protrusions 31 aremaintained at the same potential. Thus, even though the etched member29, an electric conductor, exists, the electromagnetic waves arereliably thrown from the plasma antenna 32 into the chamber 1.Consequently, the Cl₂ gas plasma 14 is stably generated inside of theetched member 29.

[0069] Owing to the Cl₂ gas plasma 14, an etching reaction occurs in theetched member 29 made of copper to form a precursor (Cu_(x)Cl_(y)) 15.At this time, the etched member 29 is maintained by the Cl₂ gas plasma14 at a predetermined temperature (e.g., 200 to 400° C.) higher than thetemperature of the substrate 3. The precursor (Cu_(x)Cl_(y)) 15 formedwithin the chamber 1 is transported toward the substrate 3 controlled toa temperature lower than the temperature of the etched member 29. Theprecursor (Cu_(x)Cl_(y)) 15 transported toward the substrate 3 isconverted into only Cu ions by a reduction reaction, and directed at thesubstrate 3 to form a thin Cu film 16 on the surface of the substrate 3.

[0070] In the metal film production apparatus having the above features,the ceiling member 28 is shaped like a bowl, and the plasma antenna 32is shaped like a conical ring along the bowl shape of the ceiling member28. Thus, the electromagnetic waves can be shot from around the ceilingmember 28 to generate the Cl₂ gas plasma 14, thereby stabilizing the Cl₂gas plasma 14 inwardly of the ceiling member 28. Hence, the uniformityof the Cl₂ gas plasma 14 inside of the chamber 1 can be achieved by theone power source.

[0071] The metal film production apparatus and metal film productionmethod according to the fifth embodiment of the present invention willbe described with reference to FIG. 8. FIG. 8 shows a schematic sideview of the metal film production apparatus for performing the metalfilm production method according to the fifth embodiment of the presentinvention. The same members as the members illustrated in FIG. 1 areassigned the same numerals, and duplicate explanations are omitted.

[0072] The metal film production apparatus according to the fifthembodiment shown in FIG. 8 is the metal film production apparatus shownin FIG. 1 provided that the shapes of the ceiling member, plasmaantenna, and etched member are different. That is, a ceiling member 38made of an insulating material (ceramic or the like) is fixed to anupper opening of the chamber 1. The ceiling member 38 is composed of adisk-shaped ceiling portion 39 and a tubular portion 40. The ceilingmember may be composed of the ceiling portion 39 alone, and an uppercylindrical portion of the chamber 1 may be composed of an insulatingmaterial for use as the tubular portion.

[0073] An etched member 33 made of a metal (Cu) is provided between theopening at the upper surface of the chamber 1 and the ceiling member 38.The etched member 33 has a tubular ring portion 34 disposed on the innerperiphery of the tubular portion 40. A plurality of protrusions 37,which extend close to the center in the diametrical direction of thechamber 1, have the same width, and have a lower surface inclined upwardand a thickness progressively decreased in an upward direction, areprovided in the circumferential direction on the inner periphery of thering portion 34. The ring portion 34 is earthed, and the pluralprotrusions 37 are electrically connected together and maintained at thesame potential (same potential maintaining means).

[0074] The sheath heater 24 and thermocouple 25, shown in the secondembodiment, or the gas passage 26 and gas ejection holes 27, shown inthe third embodiment, may be provided in the protrusion 37 of the etchedmember 33. Many grooves or depressions may be formed in the underside ofthe protrusion 37 to create a discontinuous concavity in the surface. Byso doing, even if copper grows on the underside of the protrusion 37from the precursor 15 formed by etching with the Cl₂ gas plasma 14, thecopper does not grow just downward from the underside of the protrusion37.

[0075] A plasma antenna 9, as an antenna member for converting theatmosphere inside the chamber 1 into a plasma, is provided above theceiling portion 39 of the ceiling member 38. The plasma antenna 9 isformed in a planar ring shape parallel to the surface of the ceilingportion 39. A matching instrument 10 and a power source 11, as plasmageneration means, are connected to the plasma antenna 9 to supply power.A coil antenna 41, as a coil antenna member for converting theatmosphere inside the chamber 1 into a plasma, is provided around thetubular portion 40. A second matching instrument 42 and a second powersource 43, as plasma generation means, are connected to the coil antenna41 to supply power.

[0076] The etched member 33 has the plurality of protrusions 37 providedin the circumferential direction on the inner periphery of the ringportion 34, and includes notches (spaces) formed between the protrusions37. Thus, the protrusions 37 are arranged between a substrate 3 and theceiling member 38 in a discontinuous state relative to the flowingdirection of electricity in the plasma antenna 9 and the coil antenna41.

[0077] With the above-described metal film production apparatus, thesource gas is supplied through the nozzles 12 to the interior of thechamber 1, and electromagnetic waves are shot from the plasma antenna 9and the coil antenna 41 into the chamber 1. As a result, the Cl₂ gas isionized to generate a Cl₂ gas plasma (source gas plasma) 14. The etchedmember 33, an electric conductor, is present in a portion inside thechamber 1 opposed to the plasma antenna 9 and the coil antenna 41, withthe ceiling member 38 being held between these antennas and the etchedmember 33. However, since the notches (spaces) are present, there is noflow in a direction in which the flows of electricity in the plasmaantenna 9 and the coil antenna 41 are canceled out, when the etchedmember 33 is viewed from the substrate 3, as in the first embodiment.Furthermore, the ring portion 34 is earthed, and the protrusions 37 aremaintained at the same potential. Thus, even though the etched member33, an electric conductor, exists, the electromagnetic waves arereliably thrown from the plasma antenna 9 and the coil antenna 41 intothe chamber 1. Consequently, the Cl₂ gas plasma 14 is stably generatedinside of the etched member 33.

[0078] Owing to the Cl₂ gas plasma 14, an etching reaction occurs in theetched member 33 made of copper to form a precursor (Cu_(x)Cl_(y)) 15.At this time, the etched member 33 is maintained by the Cl₂ gas plasma14 at a predetermined temperature (e.g., 200 to 400° C.) higher than thetemperature of the substrate 3. The precursor (Cu_(x)Cl_(y)) 15 formedwithin the chamber 1 is transported toward the substrate 3 controlled toa temperature lower than the temperature of the etched member 33. Theprecursor (Cu_(x)Cl_(y)) 15 transported toward the substrate 3 isconverted into only Cu ions by a reduction reaction, and directed at thesubstrate 3 to form a thin Cu film 16 on the surface of the substrate 3.

[0079] In the metal film production apparatus having the above features,the ceiling member 38 is composed of the ceiling portion 39 and thetubular portion 40, and the plasma antenna 9 and the coil antenna 41 arearranged outwardly of the ceiling member 38. Thus, the electromagneticwaves can be shot from around the ceiling member 38 to generate the Cl₂gas plasma 14, thereby stabilizing the Cl₂ gas plasma 14 inwardly of theceiling member 38. Furthermore, power is supplied individually to theplasma antenna 9 and the coil antenna 41. Hence, the state of the Cl₂gas plasma 14 within the chamber 1 can be controlled to achieve theuniformity of the Cl₂ gas plasma 14. The plasma antenna 9 and the coilantenna 41 can be integrated to perform power supply from a single powersource.

[0080] While the present invention has been described by the foregoingembodiments, it is to be understood that the invention is not limitedthereby, but may be varied in many other ways. For example, theembodiments have been described, with the etched member being disposedon the ceiling side of the chamber, and the substrate being disposed onthe lower side of the chamber. However, the positions of the etchedmember and the substrate in the vertical direction may be reversed, andin some cases, the etched member and the substrate may be arranged inthe right-and-left direction. Such variations are not to be regarded asa departure from the spirit and scope of the invention, and all suchmodifications as would be obvious to one skilled in the art are intendedto be included within the scope of the appended claims.

What is claimed is:
 1. A metal film production apparatus, comprising: achamber accommodating a substrate and having an upper portion open;source gas supply means for supplying a source gas containing a halogeninto the chamber; a ceiling member made of an insulating material forclosing an opening of the upper portion of the chamber; an antennamember provided outwardly of the ceiling member and adapted to convertan atmosphere within the chamber into a plasma by supply of power; anetched member made of a metal and comprising a plurality of segmentswhich are arranged between the substrate and the ceiling member in adiscontinuous state relative to a flowing direction of electricity inthe antenna member; plasma generation means which supplies power to theantenna member to generate on a substrate side of the etched member aflow of electricity in the same direction as the flowing direction ofelectricity in the antenna member, thereby converting the atmospherewithin the chamber into a plasma and generating a source gas plasma sothat the etched member is etched with the source gas plasma to form aprecursor of a metal component contained in the etched member and thesource gas; and temperature control means for controlling a temperatureof the substrate to be lower than a temperature of the etched member todeposit the metal component of the precursor on the substrate as a film.2. A metal film production apparatus, comprising: a cylindrical chamberaccommodating a substrate and open at one end; a disk-shaped ceilingmember made of an insulating material for closing an opening of thechamber; source gas supply means for supplying a source gas containing ahalogen into the chamber; an antenna member of a planar ring shapeprovided outwardly of the ceiling member and adapted to convert anatmosphere within the chamber into a plasma by supply of power; anetched member made of a metal and comprising a plurality of segmentswhich are arranged in a circumferential direction of the chamber andextend in a diametrical direction of the chamber between the substrateand the ceiling member, and which are in a discontinuous state relativeto a flowing direction of electricity in the antenna member; plasmageneration means which supplies power to the antenna member to generateon a substrate side of the etched member a flow of electricity in thesame direction as the flowing direction of electricity in the antennamember, thereby converting the atmosphere within the chamber into aplasma and generating a source gas plasma so that the etched member isetched with the source gas plasma to form a precursor of a metalcomponent contained in the etched member and the source gas; andtemperature control means for controlling a temperature of the substrateto be lower than a temperature of the etched member to deposit the metalcomponent of the precursor on the substrate as a film.
 3. A metal filmproduction apparatus, comprising: a cylindrical chamber accommodating asubstrate and open at one end; an outwardly curved convex ceiling membermade of an insulating material for closing an opening of the chamber;source gas supply means for supplying a source gas containing a halogeninto the chamber; an antenna member of a conical ring shape provided insurroundings outward of the ceiling member and adapted to convert anatmosphere within the chamber into a plasma by supply of power; anetched member made of a metal and comprising a plurality of segmentswhich are arranged in a circumferential direction of the chamber andextend in a diametrical direction of the chamber between the substrateand the ceiling member, and which are in a discontinuous state relativeto a flowing direction of electricity in the antenna member; plasmageneration means which supplies power to the antenna member to generateon a substrate side of the etched member a flow of electricity in thesame direction as the flowing direction of electricity in the antennamember, thereby converting the atmosphere within the chamber into aplasma and generating a source gas plasma so that the etched member isetched with the source gas plasma to form a precursor of a metalcomponent contained in the etched member and the source gas; andtemperature control means for controlling a temperature of the substrateto be lower than a temperature of the etched member to deposit the metalcomponent of the precursor on the substrate as a film.
 4. A metal filmproduction apparatus, comprising: a cylindrical chamber accommodating asubstrate and open at one end; a disk-shaped ceiling member made of aninsulating material for closing an opening of the chamber; a tubularportion made of an insulating material which is provided on the one endof the chamber; source gas supply means for supplying a source gascontaining a halogen into the chamber; an antenna member of a planarring shape provided outwardly of the ceiling member and adapted toconvert an atmosphere within the chamber into a plasma by supply ofpower; a coil antenna member of a cylindrical coil shape provided aroundthe tubular portion and adapted to convert the atmosphere within thechamber into a plasma by supply of power; an etched member made of ametal and comprising a plurality of segments which are arranged in acircumferential direction of the chamber and extend in a diametricaldirection of the chamber between the substrate and the ceiling member,and which are in a discontinuous state relative to a flowing directionof electricity in the antenna member and the coil antenna member; plasmageneration means which supplies power to the antenna member and the coilantenna member to generate on a side of the etched member opposite tothe antenna member a flow of electricity in the same direction as theflowing direction of electricity in the antenna member, therebyconverting the atmosphere within the chamber into a plasma andgenerating a source gas plasma so that the etched member is etched withthe source gas plasma to form a precursor of a metal component containedin the etched member and the source gas; and temperature control meansfor controlling a temperature of the substrate to be lower than atemperature of the etched member to deposit the metal component of theprecursor on the substrate as a film.
 5. The metal film productionapparatus of any one of claims 1 to 4, further comprising same potentialmaintaining means for connecting the plurality of segments of the etchedmember electrically to impart same potential thereto.
 6. The metal filmproduction apparatus of any one of claims 1 to 5, wherein thetemperature control means is means provided in the etched member andadapted to keep the etched member at a higher temperature than thetemperature of the substrate.
 7. The metal film production apparatus ofany one of claims 1 to 5, wherein the source gas supply means is a gassupply passage and gas ejection holes provided in the etched member, thegas ejection holes communicating with the gas supply passage.
 8. Themetal film production apparatus of any one of claims 1 to 7, wherein aconcave portion for creating a discontinuous concavity is formed in asurface of the etched member facing the substrate.
 9. The metal filmproduction apparatus of any one of claims 1 to 8, wherein the source gascontaining the halogen is a source gas containing chlorine.
 10. Themetal film production apparatus of claim 9, wherein the etched member ismade of copper to form Cu_(x)Cl_(y) as the precursor.
 11. The metal filmproduction apparatus of any one of claims 1 to 9, wherein the etchedmember is made of tantalum, tungsten or titanium which is ahalide-forming metal.
 12. A metal film production method involvingconverting an atmosphere within a chamber accommodating a substrate intoa plasma by supply of power from an antenna member, comprising:disposing an etched member made of a metal and comprising a plurality ofsegments which are arranged in a discontinuous state relative to aflowing direction of electricity in the antenna member; supplying powerto the antenna member to generate on a substrate side of the etchedmember a flow of electricity in the same direction as the flowingdirection of electricity in the antenna member, thereby converting theatmosphere within the chamber into a plasma and generating a source gasplasma so that the etched member is etched with the source gas plasma toform a precursor of a metal component contained in the etched member anda source gas; and controlling a temperature of the substrate to be lowerthan a temperature of the etched member to deposit the metal componentof the precursor on the substrate as a film.
 13. The metal filmproduction method of claim 12, wherein the source gas containing thehalogen is a source gas containing chlorine.
 14. The metal filmproduction method of claim 12, wherein the etched member is made ofcopper to form Cu_(x)Cl_(y) as the precursor.
 15. The metal filmproduction method of claim 12, wherein the etched member is made oftantalum, tungsten or titanium which is a halide-forming metal.